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US Patent Issued to SAMSUNG ELECTRONICS on July 14 for "Semiconductor devices including conductive pattern on channel" (South Korean Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,762, issued on July 14, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Semiconductor devices including conductiv... और पढ़ें


US Patent Issued to SK hynix on July 14 for "Semiconductor device including transistor" (South Korean Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,763, issued on July 14, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea). "Semiconductor device including transistor" was invented ... और पढ़ें


US Patent Issued to Winbond Electronics on July 14 for "Semiconductor device and method of manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,764, issued on July 14, was assigned to Winbond Electronics Corp. (Taichung City, Taiwan). "Semiconductor device and method of manufacturin... और पढ़ें


US Patent Issued to Semiconductor Energy Laboratory on July 14 for "Semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,765, issued on July 14, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan). "Semiconductor device" was invented by Hi... और पढ़ें


US Patent Issued to Yangtze Memory Technologies on July 14 for "Semiconductor device with staircase gate stack and sidewall isolation structure" (Chinese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,766, issued on July 14, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Semiconductor device with staircase gate stac... और पढ़ें


US Patent Issued to GlobalFoundries U.S. on July 14 for "Structure with buried doped region for coupling source line contact to gate structure of memory cell" (German Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,767, issued on July 14, was assigned to GlobalFoundries U.S. Inc. (Malta, N.Y.). "Structure with buried doped region for coupling source li... और पढ़ें


US Patent Issued to Taiwan Semiconductor Manufacturing on July 14 for "Flash memory with improved gate structure and a method of creating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,768, issued on July 14, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Flash memory with improved gate str... और पढ़ें


US Patent Issued to KIOXIA on July 14 for "Semiconductor storage device" (Japanese Inventor)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,769, issued on July 14, was assigned to KIOXIA Corp. (Tokyo). "Semiconductor storage device" was invented by Yusuke Kobayashi (Kuwana, Japa... और पढ़ें


US Patent Issued to Kioxia on July 14 for "Semiconductor memory device" (Japanese Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,770, issued on July 14, was assigned to Kioxia Corp. (Tokyo). "Semiconductor memory device" was invented by Satoshi Nagashima (Yokkaichi Mi... और पढ़ें


US Patent Issued to SK hynix on July 14 for "Semiconductor memory device with improved degree of integration" (South Korean Inventor)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,771, issued on July 14, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Semiconductor memory device with improved degree of integr... और पढ़ें